a d v a n c e d s e m i c o n d u c t o r, i n c. rev. a 7525 ethel avenue ? north hollywood, ca 91605 ? (818) 982-1200 ? fax (818) 765-3004 1/2 specifications are subject to change without notice. characteristics t c = 25 o c symbol test conditions minimum typical maximum units bv ceo i c = 10 ma 25 v bv cbo i c = 10 ma 45 v bv ebo i e = 1.0 ma 3.0 v h fe v ce = 5.0 v i c = 100 ma 20 200 --- c ob v cb = 15 v f = 1.0 mhz 3.0 pf p g p 1db v ce = 15 v i c = 100 ma p out = 0.5 w f = 1000 mhz 13 +27 +29 db dbm npn silicon rf power transistor 2sC1251 description: the 2sC1251 is a common emitter device designed for high linearity class a amplifiers up to 2.0 ghz. features include: ? direct replacement for ne74020 ? high gain - 10 db min. @ 1.0 ghz ? gold metalization maximum ratings i c 300 ma v cb 45 v p diss 5.3w @ t c = 25 o c t j -65 o c to +200 o c t stg -65 o c to +150 o c jc 33 o c/w package style .204 4l stud 1 = collector 2 & 4 = emitter 3 = base
a d v a n c e d s e m i c o n d u c t o r, i n c. rev. a 7525 ethel avenue ? north hollywood, ca 91605 ? (818) 982-1202 ? fax (818) 765-3004 2/2 tvu005b specifications are subject to change without notice. s - parameters v ce = 20 volts, i d = 150 ma freq. s11 s21 s12 s22 mhz mag. ang. mag. ang. mag. ang. mag. ang. 100 0.735 190 13.65 115 0.025 30 0.364 280 200 0.840 188 8.15 100 0.025 30 0.275 240 300 0.860 181 5.75 90 0.025 30 0.280 240 400 0.857 178 4.25 80 0.030 30 0.285 230 500 0.855 173 3.50 70 0.035 35 0.300 225 600 0.850 170 2.80 66 0.035 35 0.310 220 700 0.850 168 2.45 60 0.040 35 0.320 215 800 0.850 165 2.20 55 0.045 40 0.330 210 900 0.855 163 2.00 50 0.050 45 0.340 215 1,000 0.860 161 1.75 45 0.055 45 0.350 215
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